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FDD8424H

  • In Stock: 60000
  • Available: 231609

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.81500US $1.82
10+US $1.21000US $12.10
30+US $0.90750US $27.22
100+US $0.72600US $72.60
500+US $0.66550US $332.75
1000+US $0.60500US $605.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part #
    FDD8424H
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    PowerTrench®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    6.22mm
  • Height
    2.517mm
  • Length
    6.73mm
  • Weight
    260.37mg
  • FET Type
    N and P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • Rise Time
    3ns
  • Resistance
    24MOhm
  • FET Feature
    Logic Level Gate
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    1.3W
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    5
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    3 ns
  • Terminal Finish
    Tin (Sn)
  • Base Part Number
    FDD8424
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    17 Weeks
  • Power Dissipation
    3.1W
  • Terminal Position
    SINGLE
  • Threshold Voltage
    1.7V
  • Number of Channels
    2
  • Number of Elements
    2
  • Turn On Delay Time
    7 ns
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    20 ns
  • Max Power Dissipation
    3.1W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    4
  • Rds On (Max) @ Id, Vgs
    24m Ω @ 9A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    9A
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    9A
  • Max Junction Temperature (Tj)
    150°C
  • Drain to Source Breakdown Voltage
    40V
  • Input Capacitance (Ciss) (Max) @ Vds
    1000pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    9A 6.5A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G4
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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