IPN60R2K1CEATMA1

The IPN60R2K1CEATMA1 is a CoolMOS™ Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This MOSFET is designed for high-efficiency power conversion applications, offering low ON-resistance and high-speed switching capabilities. With a maximum drain-source voltage rating of 650V and a continuous drain current of 37A, the IPN60R2K1CEATMA1 is suitable for various power supply designs, including flyback converters, LLC resonant converters, and LED drivers. Its advanced CoolMOS™ technology ensures low conduction and switching losses, resulting in improved energy efficiency and thermal performance.

Specifications:

• Type: CoolMOS™ Power MOSFET
• Drain-Source Voltage (V_DS): 650V
• Continuous Drain Current (I_D): 37A
• Pulsed Drain Current (I_D,pulse): 150A
• On-Resistance (R_DS(on)): 80mΩ (max) at V_GS = 10V, I_D = 18A
• Gate-Source Voltage (V_GS): ±20V
• Operating Temperature Range: -55°C to +150°C
• Package: TO-220

Features:

• High Voltage Rating: With a V_DS rating of 650V, suitable for various high-power applications.
• High Continuous Drain Current: Capable of handling continuous drain currents up to 37A, enabling robust performance in demanding circuits.
• Low ON-Resistance: Offers low R_DS(on) of 80mΩ (max) at V_GS = 10V and I_D = 18A, minimizing power losses and improving efficiency.
• Fast Switching Speed: Enables efficient power management and high-speed switching in power conversion circuits.
• CoolMOS™ Technology: Advanced MOSFET technology ensures low conduction and switching losses, resulting in improved energy efficiency and thermal performance.
• TO-220 Package: Provides easy mounting and excellent thermal dissipation capabilities, ensuring reliable operation even in high-temperature environments.

Applications:

• Flyback Converters
• LLC Resonant Converters
• LED Drivers
• Switching Power Supplies
• Industrial Motor Control
• Solar Inverters