IRF540ZPBF
- Manufacturer’s Part#:IRF540ZPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 100V 36A TO-220AB
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 2500
- Available: 76032
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.26060 | US $1.26 |
10+ | US $0.84040 | US $8.40 |
30+ | US $0.63030 | US $18.91 |
100+ | US $0.50424 | US $50.42 |
500+ | US $0.46222 | US $231.11 |
1000+ | US $0.42020 | US $420.20 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRF540ZPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.69mm
- Height8.77mm
- Length10.54mm
- FET TypeN-Channel
- Lead FreeContains Lead, Lead Free
- PackagingTube
- Published2003
- Rise Time51ns
- Vgs (Max)±20V
- Resistance26.5Ohm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- TerminationThrough Hole
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Recovery Time50 ns
- Current Rating36A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Case ConnectionDRAIN
- Fall Time (Typ)39 ns
- Forward Voltage1.3V
- Terminal FinishMATTE TIN OVER NICKEL
- Factory Lead Time12 Weeks
- Power Dissipation92W
- Threshold Voltage4V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time15 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC100V
- Dual Supply Voltage100V
- Radiation HardeningNo
- Turn-Off Delay Time43 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max92W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs26.5m Ω @ 22A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)36A
- Peak Reflow Temperature (Cel)250
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds1770pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C36A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS non-compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
SHIPPING GUIDE
Shipping Methods
Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.
Shipping Cost
Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.
Delivery Time
We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.
Professional Platform
Full-speed Delivery
Wide Variety of Products
365 Days of Quality Assurance