IRFI540NPBF
- Manufacturer’s Part#:IRFI540NPBF
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:HEXFET®
- ECAD Model:
- Description:MOSFET N-CH 100V 20A TO220FP
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 30000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.94149 | US $0.94 |
10+ | US $0.62766 | US $6.28 |
30+ | US $0.47074 | US $14.12 |
100+ | US $0.37660 | US $37.66 |
500+ | US $0.34521 | US $172.61 |
1000+ | US $0.31383 | US $313.83 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part #IRFI540NPBF
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesHEXFET®
- ECCNEAR99
- MountThrough Hole
- Width4.826mm
- Height9.8mm
- Length10.6172mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Published1998
- Rise Time39ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs4 V
- Part StatusActive
- SubcategoryFET General Purpose Power
- TerminationThrough Hole
- REACH StatusREACH Unaffected
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Recovery Time250 ns
- Current Rating20A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3 Full Pack
- Case ConnectionISOLATED
- Fall Time (Typ)33 ns
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- Factory Lead Time12 Weeks
- Isolation Voltage2.5kV
- Power Dissipation42W
- Threshold Voltage4V
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- Number of Elements1
- Turn On Delay Time8.2 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC100V
- Dual Supply Voltage100V
- Radiation HardeningNo
- Turn-Off Delay Time44 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max54W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs52m Ω @ 11A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs94nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)20A
- Peak Reflow Temperature (Cel)260
- Drain-source On Resistance-Max0.052Ohm
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds1400pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C20A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS non-compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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