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1ED020I12-B2
- Manufacturer's Part No.:1ED020I12-B2
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- Description:PG-DSO-16-15 IGBT RoHS
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- In Stock: 8016
- Available: 40
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $5.34600 | US $5.35 |
10+ | US $4.81140 | US $48.11 |
30+ | US $3.74220 | US $112.27 |
100+ | US $3.07395 | US $307.40 |
500+ | US $2.94030 | US $1470.15 |
1000+ | US $2.67300 | US $2673.00 |
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- Description
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- Shopping Guide
The 1ED020I12-B2 is a high-performance gate driver IC manufactured by Infineon Technologies, designed specifically for driving power MOSFETs and IGBTs in various applications, including industrial, automotive, and renewable energy systems.
Key Features:
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Single-Channel Gate Driver: The 1ED020I12-B2 is a single-channel driver, which means it is capable of driving one power device at a time. This makes it suitable for applications where space and efficiency are critical.
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High Voltage Capability: This gate driver can operate with a supply voltage of up to 20V, making it suitable for high-voltage applications. It is designed to handle the gate drive requirements of high-voltage power devices effectively.
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Fast Switching Speed: The device is optimized for fast switching, which helps to reduce switching losses and improve overall efficiency in power conversion applications. The rise and fall times are typically in the range of nanoseconds, allowing for high-frequency operation.
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Isolation: The 1ED020I12-B2 features integrated isolation, which is crucial for protecting sensitive control circuits from high-voltage spikes and noise generated by the power devices.
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Integrated Protection Features: The IC includes built-in protection features such as under-voltage lockout (UVLO), which prevents the driver from operating when the supply voltage is too low, and thermal shutdown to protect against overheating.
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Low Output Impedance: The driver has a low output impedance, which allows it to deliver high peak currents to the gate of the power device, ensuring rapid turn-on and turn-off.
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Flexible Configuration: The 1ED020I12-B2 can be configured for various applications, with options for different gate resistances and driving modes, making it versatile for different circuit designs.
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Compact Package: The IC is available in a compact package, which is advantageous for space-constrained designs. This allows for easier integration into existing systems without requiring significant redesign.
Applications:
The 1ED020I12-B2 is suitable for a wide range of applications, including:
- DC-DC Converters: Used in power supplies for efficient voltage conversion.
- Inverters: Ideal for solar inverters and motor drives where efficient power conversion is essential.
- Switching Power Supplies: Employed in various electronic devices requiring efficient power management.
- Industrial Drives: Utilized in applications such as robotics and automation where precise control of power devices is necessary.
Conclusion:
Overall, the 1ED020I12-B2 from Infineon Technologies is a robust and efficient gate driver IC that provides essential features for driving power MOSFETs and IGBTs in demanding applications. Its combination of high voltage capability, fast switching speeds, and integrated protection makes it a reliable choice for engineers looking to enhance the performance of their power electronic systems.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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