1N4448HWT-7
- Manufacturer's Part No.:1N4448HWT-7
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- Description:DIODE GEN PURP 80V 125MA SOD523
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- In Stock: 735
- Available: 1631281
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.12522 | US $0.13 |
10+ | US $0.08348 | US $0.83 |
30+ | US $0.06261 | US $1.88 |
100+ | US $0.05009 | US $5.01 |
500+ | US $0.04591 | US $22.96 |
1000+ | US $0.04174 | US $41.74 |
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- Description
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The 1N4448HWT-7 is a high-speed switching diode manufactured by Diodes Incorporated, designed for a variety of electronic applications. This diode is part of the 1N4448 series, which is well-known for its reliability and performance in both commercial and industrial settings.
Key Features:
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Type: The 1N4448HWT-7 is a standard silicon switching diode, which means it is optimized for fast switching applications, making it suitable for use in high-frequency circuits.
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Package: It is typically available in a surface-mount package, specifically the SOD-123, which allows for efficient space utilization on printed circuit boards (PCBs). The compact size of the package makes it ideal for modern electronic devices where space is at a premium.
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Electrical Characteristics:
- Reverse Voltage (VR): The diode has a maximum reverse voltage rating of 100V, which allows it to handle a wide range of applications without the risk of breakdown.
- Forward Current (IF): It can handle a forward current of up to 1A, making it suitable for various power applications.
- Forward Voltage Drop (VF): The typical forward voltage drop is around 0.7V at a forward current of 1A, which is standard for silicon diodes, ensuring efficient operation with minimal power loss.
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Switching Speed: The 1N4448HWT-7 is designed for high-speed switching, with a reverse recovery time of approximately 4 nanoseconds. This characteristic makes it particularly useful in applications such as signal processing, rectification, and clamping.
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Temperature Range: The diode operates effectively over a wide temperature range, typically from -55°C to +150°C, allowing it to be used in various environmental conditions.
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Applications: Common applications for the 1N4448HWT-7 include:
- Signal detection and processing
- High-speed switching circuits
- Rectification in power supplies
- Protection circuits for sensitive components
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Compliance and Standards: The diode is compliant with various industry standards, ensuring its reliability and performance in critical applications.
Summary:
The 1N4448HWT-7 from Diodes Incorporated is a versatile and reliable high-speed switching diode, ideal for a wide range of electronic applications. Its compact SOD-123 package, high reverse voltage capability, and fast switching characteristics make it a preferred choice for engineers and designers looking to optimize their circuit designs. Whether used in consumer electronics, industrial equipment, or automotive applications, the 1N4448HWT-7 provides dependable performance and efficiency.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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