1N5822
- Manufacturer's Part No.:1N5822
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- Description:DO-27 Schottky Barrier Diodes (SBD) RoHS
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1+ | US $0.50709 | US $0.51 |
10+ | US $0.33806 | US $3.38 |
30+ | US $0.25355 | US $7.61 |
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1000+ | US $0.16903 | US $169.03 |
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The 1N5822 is a popular Schottky barrier rectifier diode, widely used in various electronic applications due to its efficiency and reliability. Here’s a detailed description of the 1N5822:
General Characteristics:
- Type: Schottky Diode
- Part Number: 1N5822
- Manufacturer: TF (or other manufacturers, as it is a standard part)
Physical Appearance:
- Package Type: Typically available in a DO-41 package, which is a cylindrical glass package with two leads extending from the base.
- Dimensions: The diode is usually about 3.2 mm in diameter and 6.5 mm in length, with leads that are approximately 0.5 mm in diameter.
- Markings: The diode may have a marking on the body indicating the part number (1N5822) and the manufacturer's logo. The cathode side is often marked with a band or stripe.
Electrical Specifications:
- Maximum Reverse Voltage (VR): The 1N5822 can handle a maximum reverse voltage of 40 volts, making it suitable for various low to moderate voltage applications.
- Forward Current (IF): It has a maximum forward current rating of 3.0 amperes, allowing it to conduct significant current in forward bias.
- Forward Voltage Drop (VF): The typical forward voltage drop is around 0.45 to 0.55 volts at a forward current of 3A, which is lower than that of standard silicon diodes, contributing to its efficiency.
- Reverse Recovery Time (trr): The 1N5822 features a very fast reverse recovery time, typically in the range of 25 nanoseconds, which is advantageous in high-frequency applications.
Thermal Characteristics:
- Operating Temperature Range: The diode can operate in a temperature range from -55°C to +125°C, making it suitable for various environmental conditions.
- Junction Temperature (TJ): The maximum junction temperature is typically around 150°C, allowing for reliable operation under high thermal stress.
Applications:
The 1N5822 is commonly used in:
- Power supply circuits for rectification.
- Freewheeling diodes in inductive loads.
- Solar panel applications for blocking and rectification.
- Battery charging circuits.
- DC-DC converters and switch-mode power supplies.
Advantages:
- Low Forward Voltage Drop: This characteristic leads to higher efficiency and reduced heat generation.
- Fast Switching Speed: The quick response time makes it ideal for high-frequency applications.
- High Reliability: The Schottky design provides robustness in various operating conditions.
Conclusion:
The 1N5822 from TF is a versatile and efficient Schottky diode that is well-suited for a wide range of electronic applications. Its combination of low forward voltage drop, high current capacity, and fast switching capabilities make it a preferred choice for engineers and designers in the field of electronics.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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