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2N3663

  • Available: 10953

Reference Price(In US Dollars)

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1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    2N3663
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - RF
  • Series
    -
  • ECCN
    EAR99
  • Gain
    1.5dB
  • HTS Code
    8541.21.00.75
  • Packaging
    Bulk
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Power - Max
    350mW
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE
  • Mounting Type
    Through Hole
  • Surface Mount
    NO
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Terminal Finish
    MATTE TIN
  • Transistor Type
    NPN
  • Terminal Position
    BOTTOM
  • Number of Elements
    1
  • Qualification Status
    Not Qualified
  • Transition Frequency
    700MHz
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    NPN
  • Reach Compliance Code
    unknown
  • Frequency - Transition
    2.1GHz
  • Highest Frequency Band
    VERY HIGH FREQUENCY B
  • Number of Terminations
    3
  • Transistor Application
    AMPLIFIER
  • Noise Figure (dB Typ @ f)
    6.5dB @ 60MHz
  • Reflow Temperature-Max (s)
    NOT APPLICABLE
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    NOT APPLICABLE
  • Collector-Base Capacitance-Max
    1.7pF
  • Current - Collector (Ic) (Max)
    50mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 8mA 10V
  • Voltage - Collector Emitter Breakdown (Max)
    12V

Environmental & Export Classifications

  • HTSUS
    8541.21.0075
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    O-PBCY-T3
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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