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2N5179 PBFREE

  • Available: 16321

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $5.56000US $5.56

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Product Parameter

  • Manufacturer
    Central Semiconductor Corp
  • Manufacturer's Part No.
    2N5179 PBFREE
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - RF
  • Series
  • Polarity/Channel Type
    NPN
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Package / Case
    TO-206AF, TO-72-4 Metal Can
  • Part Status
    Active
  • Operating Temperature
    -65°C~200°C TJ
  • Factory Lead Time
    24 Weeks
  • Packaging
    Bulk
  • Subcategory
    Other Transistors
  • Surface Mount
    NO
  • Number of Terminations
    4
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Transistor Type
    NPN
  • Current - Collector (Ic) (Max)
    50mA
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Frequency - Transition
    2GHz
  • Power - Max
    200mW
  • Mounting Type
    Through Hole
  • Transistor Element Material
    SILICON
  • Transistor Application
    AMPLIFIER
  • Transition Frequency
    900MHz
  • VCEsat-Max
    0.4 V
  • Power Dissipation-Max (Abs)
    0.3W
  • Collector-Base Capacitance-Max
    1pF
  • Highest Frequency Band
    ULTRA HIGH FREQUENCY B
  • Gain
    15dB
  • Noise Figure (dB Typ @ f)
    4.5dB @ 200MHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    25 @ 3mA 1V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • JESD-30 Code
    O-MBCY-W4

SHIPPING GUIDE

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  • Delivery Time

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