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2N5460G

  • Available: 594

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    2N5460G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - JFETs
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • FET Type
    P-Channel
  • HTS Code
    8541.21.00.95
  • Lead Free
    Lead Free
  • Packaging
    Bulk
  • Pin Count
    3
  • Published
    2001
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Power - Max
    350mW
  • Subcategory
    FET General Purpose Small Signal
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Current Rating
    10mA
  • FET Technology
    JUNCTION
  • Number of Pins
    3
  • Operating Mode
    DEPLETION MODE
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Base Part Number
    2N5460
  • Lifecycle Status
    OBSOLETE (Last Updated: 8 hours ago)
  • Power Dissipation
    200mW
  • Terminal Position
    BOTTOM
  • Number of Elements
    1
  • Voltage - Rated DC
    -40V
  • Qualification Status
    Not Qualified
  • Element Configuration
    Single
  • Max Power Dissipation
    350mW
  • Operating Temperature
    -65°C~135°C TJ
  • Number of Terminations
    3
  • Transistor Application
    AMPLIFIER
  • Feedback Cap-Max (Crss)
    2 pF
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Gate to Source Voltage (Vgs)
    40V
  • Peak Reflow Temperature (Cel)
    260
  • Voltage - Cutoff (VGS off) @ Id
    750mV @ 1μA
  • Current - Drain (Idss) @ Vds (Vgs=0)
    1mA @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds
    7pF @ 15V

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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