2N5551RLRPG
- Manufacturer's Part No.:2N5551RLRPG
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:TRANS NPN 160V 0.6A TO-92
- Datasheet:
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- Available: 475
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.2N5551RLRPG
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Single
- Series-
- Polarity/Channel TypeNPN
- Time@Peak Reflow Temperature-Max (s)40
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Part StatusObsolete
- Operating Temperature-55°C~150°C TJ
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
- Number of Pins3
- PackagingTape & Box (TB)
- SubcategoryOther Transistors
- Base Part Number2N5551
- Surface MountNO
- Number of Terminations3
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Pin Count3
- Number of Elements1
- Lead FreeLead Free
- Radiation HardeningNo
- Published2007
- Pbfree Codeyes
- Current Rating600mA
- Voltage - Rated DC160V
- Max Power Dissipation625mW
- Transistor TypeNPN
- Current - Collector Cutoff (Max)50nA ICBO
- Mounting TypeThrough Hole
- Transistor Element MaterialSILICON
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Collector Emitter Voltage (VCEO)160V
- Max Collector Current600mA
- Collector Emitter Breakdown Voltage160V
- Transition Frequency100MHz
- hFE Min80
- Power Dissipation625mW
- Collector Emitter Saturation Voltage250mV
- Emitter Base Voltage (VEBO)6V
- Gain Bandwidth Product300MHz
- Collector Base Voltage (VCBO)180V
- Frequency300MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA 5V
- Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee1
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