2N5551ZL1
- Manufacturer's Part No.:2N5551ZL1
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- Series:-
- Description:TRANS NPN 160V 0.6A TO-92
- Datasheet:
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- Available: 489
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.2N5551ZL1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Single
- Series-
- Polarity/Channel TypeNPN
- Time@Peak Reflow Temperature-Max (s)30
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Part StatusObsolete
- Operating Temperature-55°C~150°C TJ
- MountThrough Hole
- PackagingTape & Box (TB)
- SubcategoryOther Transistors
- Base Part Number2N5551
- Number of Terminations3
- Terminal FinishTin/Lead (Sn/Pb)
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Lead FreeContains Lead
- Published2006
- HTS Code8541.21.00.95
- Current Rating600mA
- Additional FeatureEUROPEAN PART NUMBER
- Voltage - Rated DC160V
- Max Power Dissipation625mW
- Transistor TypeNPN
- Current - Collector Cutoff (Max)50nA ICBO
- Mounting TypeThrough Hole
- Transistor Element MaterialSILICON
- Element ConfigurationSingle
- Transistor ApplicationAMPLIFIER
- Collector Emitter Voltage (VCEO)200mV
- Max Collector Current600mA
- Collector Emitter Breakdown Voltage160V
- Transition Frequency100MHz
- hFE Min80
- Collector Emitter Saturation Voltage250mV
- Emitter Base Voltage (VEBO)6V
- Gain Bandwidth Product300MHz
- Collector Base Voltage (VCBO)180V
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA 5V
- Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusNon-RoHS Compliant
- JESD-609 Codee0
- JESD-30 CodeO-PBCY-T3
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