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2N5551

  • In Stock: 200000
  • Available: 92595

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.03152US $0.03
10+US $0.02101US $0.21
30+US $0.01576US $0.47
100+US $0.01261US $1.26
500+US $0.01156US $5.78
1000+US $0.01051US $10.51

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  • Description
  • Alternatives
  • Shopping Guide
Description

The 2N5551 is a widely used NPN bipolar junction transistor (BJT) manufactured by Central Semiconductor Corp, among other manufacturers. It is designed for general-purpose amplification and switching applications. Here’s a detailed description of its characteristics and specifications:

Physical Characteristics:

  • Package Type: The 2N5551 typically comes in a TO-220 package, which is a metal can with three leads extending from the bottom. This package design allows for efficient heat dissipation, making it suitable for applications that require higher power handling.
  • Lead Configuration: The transistor has three leads: the collector (C), base (B), and emitter (E). The standard pinout for the TO-220 package is:
    • Pin 1: Base
    • Pin 2: Collector
    • Pin 3: Emitter

Electrical Characteristics:

  • Maximum Collector-Emitter Voltage (Vce): The 2N5551 can handle a maximum Vce of 160V, making it suitable for high-voltage applications.
  • Maximum Collector Current (Ic): It has a maximum collector current rating of 15A, allowing it to drive significant loads.
  • DC Current Gain (hFE): The transistor exhibits a DC current gain (hFE) ranging from 20 to 150, depending on the collector current, which indicates its efficiency in amplifying input signals.
  • Transition Frequency (fT): The transition frequency is typically around 100 MHz, which defines the frequency range over which the transistor can operate effectively.

Thermal Characteristics:

  • Junction Temperature (Tj): The maximum junction temperature is rated at 150°C, allowing for operation in high-temperature environments.
  • Thermal Resistance: The thermal resistance from junction to case is low, which helps in maintaining performance under load.

Applications:

The 2N5551 is suitable for a variety of applications, including:

  • Amplification: It can be used in audio amplifiers, RF amplifiers, and other signal amplification circuits.
  • Switching: The transistor is effective in switching applications, such as driving relays, motors, and other inductive loads.
  • Linear Regulators: It can be used in linear voltage regulator circuits due to its ability to handle significant current and voltage levels.

Key Features:

  • High voltage and current ratings make it versatile for various applications.
  • Good thermal performance due to its TO-220 package.
  • Suitable for both analog and digital applications.

Conclusion:

The 2N5551 from Central Semiconductor Corp is a robust and reliable NPN transistor that is widely used in electronic circuits for amplification and switching. Its combination of high voltage, high current capabilities, and good thermal performance makes it a popular choice among engineers and hobbyists alike.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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