2N6426RLRAG
- Manufacturer's Part No.:2N6426RLRAG
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- Series:-
- Description:TRANS NPN DARL 40V 0.5A TO-92
- Datasheet:
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- Available: 14049
Reference Price(In US Dollars)
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.2N6426RLRAG
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Single
- Series-
- ECCNEAR99
- Width6.35mm
- Height6.35mm
- Length6.35mm
- Weight4.535924g
- PolarityNPN
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count3
- Published2007
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Surface MountNO
- Current Rating500mA
- Number of Pins3
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Contact PlatingCopper, Silver, Tin
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Transistor TypeNPN - Darlington
- Base Part Number2N6426
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Power Dissipation625mW
- Terminal PositionBOTTOM
- Number of Elements1
- Voltage - Rated DC40V
- Radiation HardeningNo
- Transition Frequency125MHz
- Element ConfigurationSingle
- Max Collector Current500mA
- Max Power Dissipation625mW
- Operating Temperature-55°C~150°C TJ
- Gain Bandwidth Product150MHz
- Number of Terminations3
- Transistor ApplicationAMPLIFIER
- Reflow Temperature-Max (s)40
- Emitter Base Voltage (VEBO)12V
- Transistor Element MaterialSILICON
- Continuous Collector Current500mA
- Collector Base Voltage (VCBO)40V
- Peak Reflow Temperature (Cel)260
- Vce Saturation (Max) @ Ib, Ic1.5V @ 500μA, 500mA
- Collector Emitter Voltage (VCEO)40V
- Current - Collector Cutoff (Max)1μA
- Collector Emitter Breakdown Voltage40V
- Collector Emitter Saturation Voltage1.2V
- DC Current Gain (hFE) (Min) @ Ic, Vce30000 @ 100mA 5V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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