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2N6517TA

  • In Stock: 210000
  • Available: 1344664

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.24900US $0.25
10+US $0.16600US $1.66
30+US $0.12450US $3.74
100+US $0.09960US $9.96
500+US $0.09130US $45.65
1000+US $0.08300US $83.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    2N6517TA
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    3.86mm
  • Height
    4.58mm
  • Length
    4.58mm
  • Weight
    240mg
  • hFE Min
    30
  • Frequency
    200MHz
  • Lead Free
    Lead Free
  • Packaging
    Tape & Box (TB)
  • Published
    2007
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Current Rating
    500mA
  • Number of Pins
    3
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Contact Plating
    Tin
  • Transistor Type
    NPN
  • Base Part Number
    2N6517
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    6 Weeks
  • Power Dissipation
    625mW
  • Terminal Position
    BOTTOM
  • Number of Elements
    1
  • Voltage - Rated DC
    350V
  • Radiation Hardening
    No
  • Transition Frequency
    40MHz
  • Element Configuration
    Single
  • Max Breakdown Voltage
    350V
  • Max Collector Current
    500mA
  • Max Power Dissipation
    625mW
  • Operating Temperature
    150°C TJ
  • Polarity/Channel Type
    NPN
  • Gain Bandwidth Product
    200MHz
  • Number of Terminations
    3
  • Emitter Base Voltage (VEBO)
    6V
  • Transistor Element Material
    SILICON
  • Collector Base Voltage (VCBO)
    350V
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 5mA, 50mA
  • Collector Emitter Voltage (VCEO)
    350V
  • Current - Collector Cutoff (Max)
    50nA ICBO
  • Collector Emitter Breakdown Voltage
    350V
  • Collector Emitter Saturation Voltage
    1V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 50mA 10V

Environmental & Export Classifications

  • HTSUS
    8541.21.0075
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    Not Applicable

SHIPPING GUIDE

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