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2N6661

  • Available: 8196

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $30.22000US $30.22
10+US $22.66500US $226.65
30+US $19.64300US $589.29
100+US $17.37650US $1737.65
500+US $16.31880US $8159.40
1000+US $15.11000US $15110.00

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Product Parameter

  • Manufacturer
    Microchip Technology
  • Manufacturer's Part No.
    2N6661
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    -
  • Package / Case
    TO-205AD, TO-39-3 Metal Can
  • Part Status
    Active
  • Operating Temperature
    -55°C~150°C TJ
  • Supplier Device Package
    TO-39
  • Factory Lead Time
    14 Weeks
  • Mount
    Through Hole
  • Number of Pins
    3
  • Packaging
    Bulk
  • Published
    2010
  • Contact Plating
    Gold
  • Height
    6.604mm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Mounting Type
    Through Hole
  • Element Configuration
    Single
  • Power Dissipation
    6.25W
  • Number of Channels
    1
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    6.25W Tc
  • Ambient Temperature Range High
    150°C
  • Input Capacitance
    50pF
  • Turn On Delay Time
    10 ns
  • Turn-Off Delay Time
    10 ns
  • Drain to Source Voltage (Vdss)
    90V
  • Continuous Drain Current (ID)
    350mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    90V
  • Threshold Voltage
    800mV
  • Drain to Source Resistance
    4Ohm
  • FET Type
    N-Channel
  • Vgs(th) (Max) @ Id
    2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 24V
  • Vgs (Max)
    ±20V
  • Rds On Max
    4 Ω
  • Current - Continuous Drain (Id) @ 25°C
    350mA Tj
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Rds On (Max) @ Id, Vgs
    4Ohm @ 1A, 10V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • RoHS Status
    Non-RoHS Compliant

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