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2N6798

  • Available: 10140

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    2N6798
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • FET Type
    N-Channel
  • HTS Code
    8541.21.00.95
  • Packaging
    Bulk
  • Published
    1997
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Obsolete
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Through Hole
  • Terminal Form
    WIRE
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-205AF Metal Can
  • Case Connection
    DRAIN
  • Terminal Finish
    TIN LEAD OVER NICKEL
  • Terminal Position
    BOTTOM
  • Number of Elements
    1
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Qualification Status
    Not Qualified
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    800mW Ta 25W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    400m Ω @ 3.5A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    200V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    5.29nC @ 10V
  • Continuous Drain Current (ID)
    5.5A
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain to Source Voltage (Vdss)
    200V
  • Drain-source On Resistance-Max
    0.42Ohm
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    5.5A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS non-compliant
  • JESD-30 Code
    O-MBCY-W3
  • JESD-609 Code
    e0
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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