2N7000RLRAG
- Manufacturer's Part No.:2N7000RLRAG
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N-CH 60V 200MA TO-92
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 60010
- Available: 8615
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.00000 | US $2.00 |
10+ | US $1.80000 | US $18.00 |
30+ | US $1.40000 | US $42.00 |
100+ | US $1.15000 | US $115.00 |
500+ | US $1.10000 | US $550.00 |
1000+ | US $1.00000 | US $1000.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.2N7000RLRAG
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- ECCNEAR99
- Width3.175mm
- Height4.318mm
- Length4.445mm
- Weight4.535924g
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingCut Tape (CT)
- Pin Count3
- Published2004
- Vgs (Max)±20V
- Resistance5Ohm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs3 V
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeThrough Hole
- Surface MountNO
- Current Rating200mA
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Contact PlatingCopper, Silver, Tin
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Power Dissipation350mW
- Terminal PositionBOTTOM
- Threshold Voltage3V
- Number of Elements1
- Turn On Delay Time10 ns
- Vgs(th) (Max) @ Id3V @ 1mA
- Voltage - Rated DC60V
- Radiation HardeningNo
- Turn-Off Delay Time10 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max350mW Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs5 Ω @ 500mA, 10V
- Feedback Cap-Max (Crss)5 pF
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)0.2A
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)200mA
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds60pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C200mA Ta
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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