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2N7002DW

  • In Stock: 6000
  • Available: 96000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.25080US $0.25
10+US $0.16720US $1.67
30+US $0.12540US $3.76
100+US $0.10032US $10.03
500+US $0.09196US $45.98
1000+US $0.08360US $83.60

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Description

The 2N7002DW is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for low-voltage applications and is particularly well-suited for switching and amplification tasks in electronic circuits. Below is a detailed description of its key features and specifications:

Package and Physical Characteristics:

  • Package Type: The 2N7002DW is available in a surface-mount package, specifically the SOT-23 package, which is compact and suitable for space-constrained applications.
  • Dimensions: The SOT-23 package typically measures approximately 2.9 mm x 1.3 mm x 1.1 mm, making it ideal for modern electronic designs that require miniaturization.

Electrical Characteristics:

  • Drain-Source Voltage (V_DS): The maximum drain-source voltage is rated at 60V, allowing it to handle a wide range of applications without risk of breakdown.
  • Gate-Source Voltage (V_GS): The maximum gate-source voltage is typically ±20V, providing flexibility in control signal levels.
  • Continuous Drain Current (I_D): The device can handle a continuous drain current of up to 200 mA, making it suitable for driving loads in various applications.
  • On-Resistance (R_DS(on)): The on-resistance is low, typically around 0.5 ohms at V_GS = 10V, which minimizes power loss during operation and enhances efficiency.

Performance Characteristics:

  • Switching Speed: The 2N7002DW features fast switching capabilities, which is essential for high-frequency applications. The rise and fall times are typically in the nanosecond range, allowing for efficient operation in digital circuits.
  • Thermal Resistance: The thermal resistance from junction to ambient is low, which helps in managing heat dissipation during operation. This characteristic is crucial for maintaining reliability and performance in high-power applications.

Applications:

The 2N7002DW is widely used in various applications, including:

  • Switching Regulators: It can be used in power management circuits to switch power on and off efficiently.
  • Signal Switching: Ideal for use in digital circuits where it can act as a switch to control signal paths.
  • Relay Replacement: It can replace mechanical relays in applications where faster switching and longer life are desired.
  • LED Drivers: Suitable for driving LEDs in lighting applications due to its ability to handle moderate currents.

Additional Features:

  • Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 1V to 3V, which allows for operation with low control voltages.
  • Robustness: The device is designed to be robust, with built-in protection against over-voltage and over-current conditions, enhancing its reliability in various environments.

Conclusion:

The 2N7002DW from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a variety of electronic applications. Its compact size, low on-resistance, and fast switching capabilities make it an excellent choice for modern electronic designs requiring reliable performance in a small footprint.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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