2N7002H6327XTSA2
- Manufacturer's Part No.:2N7002H6327XTSA2
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:OptiMOS™
- Description:MOSFET N-CH 60V 0.3A SOT23
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 5000
- Available: 138000
- Updated: 1 Day 15 HRS ago
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.08262 | US $0.08 |
10+ | US $0.05508 | US $0.55 |
30+ | US $0.04131 | US $1.24 |
100+ | US $0.03305 | US $3.31 |
500+ | US $0.03029 | US $15.15 |
1000+ | US $0.02754 | US $27.54 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.2N7002H6327XTSA2
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesOptiMOS™
- ECCNEAR99
- MountSurface Mount
- Width1.3mm
- Height1.1mm
- Length2.9mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingCut Tape (CT)
- Pin Count3
- Published2012
- Rise Time3.3ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- Halogen FreeHalogen Free
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating115mA
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Terminal FinishTin (Sn)
- Factory Lead Time10 Weeks
- Power Dissipation200mW
- Terminal PositionDUAL
- Threshold Voltage2.1V
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Number of Channels1
- Number of Elements1
- Turn On Delay Time3 ns
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Voltage - Rated DC60V
- Turn-Off Delay Time5.5 ns
- Qualification StatusNot Qualified
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max500mW Ta
- Number of Terminations3
- Rds On (Max) @ Id, Vgs3 Ω @ 500mA, 10V
- Transistor ApplicationSWITCHING
- Max Dual Supply Voltage60V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs0.6nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)300mA
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max3Ohm
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds20pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C300mA Ta
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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