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2N7002H6327XTSA2

  • In Stock: 5000
  • Available: 138000
  • Updated: 1 Day 15 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.08262US $0.08
10+US $0.05508US $0.55
30+US $0.04131US $1.24
100+US $0.03305US $3.31
500+US $0.03029US $15.15
1000+US $0.02754US $27.54

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Product Parameter

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part No.
    2N7002H6327XTSA2
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    OptiMOS™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    1.3mm
  • Height
    1.1mm
  • Length
    2.9mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Cut Tape (CT)
  • Pin Count
    3
  • Published
    2012
  • Rise Time
    3.3ns
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • Halogen Free
    Halogen Free
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    115mA
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Terminal Finish
    Tin (Sn)
  • Factory Lead Time
    10 Weeks
  • Power Dissipation
    200mW
  • Terminal Position
    DUAL
  • Threshold Voltage
    2.1V
  • Additional Feature
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    3 ns
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Voltage - Rated DC
    60V
  • Turn-Off Delay Time
    5.5 ns
  • Qualification Status
    Not Qualified
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    500mW Ta
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    3 Ω @ 500mA, 10V
  • Transistor Application
    SWITCHING
  • Max Dual Supply Voltage
    60V
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    0.6nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    300mA
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Drain-source On Resistance-Max
    3Ohm
  • Drain to Source Breakdown Voltage
    60V
  • Input Capacitance (Ciss) (Max) @ Vds
    20pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    300mA Ta

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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