2N7002K-7

The 2N7002K-7 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. It is designed for low-voltage applications and is widely used in various electronic circuits due to its efficiency and reliability.

Key Features:

1. Type: N-channel MOSFET
2. Package: The 2N7002K-7 is typically available in a SOT-23 package, which is a small, surface-mount package that allows for efficient use of board space.
3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 60V, making it suitable for a variety of applications that require moderate voltage handling.
4. Current Rating: It can handle a continuous drain current (I_D) of up to 200mA, which is adequate for many low-power switching applications.
5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 0.8V to 3V, allowing it to be driven by low-voltage logic levels.
6. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of 10V, which contributes to lower power losses during operation.
7. Switching Speed: The 2N7002K-7 features fast switching capabilities, making it suitable for high-speed applications such as switching power supplies and signal switching.
8. Thermal Characteristics: The device has a thermal resistance (RθJA) that allows it to operate efficiently without overheating, provided it is used within its specified limits.

Applications:

The 2N7002K-7 is commonly used in various applications, including:

• Switching Regulators: It can be used in DC-DC converters and other power management circuits.
• Signal Switching: Ideal for switching signals in digital circuits, such as microcontroller outputs.
• Load Switching: Suitable for controlling loads in automotive and industrial applications.
• Relay Replacement: Can be used to replace mechanical relays in low-power applications for faster switching and increased reliability.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): Typically around 300mW, depending on the thermal management of the PCB.
• Operating Temperature Range: The device can operate in a temperature range from -55°C to +150°C, making it suitable for a variety of environmental conditions.

Conclusion:

The 2N7002K-7 from Diodes Incorporated is a versatile and efficient N-channel MOSFET that is well-suited for low-voltage applications. Its compact size, low on-resistance, and fast switching capabilities make it a popular choice among engineers and designers for a wide range of electronic circuits.