2N7002PS,125

The 2N7002PS,125 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Nexperia, designed for low-voltage applications. This component is particularly well-suited for switching and amplification tasks in various electronic circuits.

Key Features:

1. Type: N-channel MOSFET
2. Package: The 2N7002PS,125 is housed in a SOT-23 package, which is a small, surface-mount device (SMD) that allows for efficient use of PCB space. The SOT-23 package typically has three terminals.
3. Voltage Rating: The maximum drain-source voltage (V_DS) is rated at 60V, making it suitable for a wide range of applications.
4. Current Rating: The maximum continuous drain current (I_D) is approximately 200 mA, which allows it to handle moderate loads effectively.
5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 0.8V and 3V, which means it can be turned on with a relatively low gate voltage, making it compatible with low-voltage logic levels.
6. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation.
7. Switching Speed: The 2N7002PS,125 features fast switching capabilities, making it ideal for high-speed applications.
8. Thermal Characteristics: The device has a maximum junction temperature of 150°C, allowing it to operate in a variety of thermal environments.

Applications:

The 2N7002PS,125 is commonly used in:

• Switching Regulators: For efficient power management in various electronic devices.
• Signal Switching: In digital circuits where low-voltage control signals are used to switch higher voltage loads.
• Relay Replacement: In applications where traditional electromechanical relays are replaced with solid-state solutions for faster response times and increased reliability.
• LED Drivers: For controlling LED lighting systems, where precise control of current is necessary.

Electrical Characteristics:

• Gate-Source Voltage (V_GS): Maximum of ±20V.
• Drain-Source Breakdown Voltage (V(BR)DSS): Minimum of 60V.
• Input Capacitance (C_iss): Typically around 60 pF, which affects the speed of the device in switching applications.

Conclusion:

The 2N7002PS,125 from Nexperia is a versatile and efficient N-channel MOSFET that is well-suited for a variety of low-voltage applications. Its compact SOT-23 package, combined with its favorable electrical characteristics, makes it a popular choice among engineers and designers looking for reliable performance in their electronic circuits.