2N7002PS

The 2N7002PS is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for low-voltage applications and is particularly well-suited for switching and amplification tasks in electronic circuits.

Key Features:

1. Type: N-channel MOSFET
2. Package: The 2N7002PS is typically available in a surface-mount package, specifically the SOT-23 package, which is compact and suitable for space-constrained applications.
3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 60V, making it suitable for a variety of low to moderate voltage applications.
4. Current Rating: It can handle a continuous drain current (I_D) of up to 200 mA, which allows it to drive small loads effectively.
5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 0.8V to 3V, which means it can be turned on with a relatively low gate voltage, making it compatible with low-voltage logic levels.
6. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation.
7. Switching Speed: The 2N7002PS features fast switching capabilities, making it ideal for high-speed applications such as pulse-width modulation (PWM) and digital signal switching.
8. Thermal Characteristics: The device has a thermal resistance junction-to-ambient (RθJA) that allows it to operate efficiently without overheating under normal conditions.

Applications:

The 2N7002PS is commonly used in various applications, including:

• Switching Regulators: It can be used in power management circuits to switch power on and off efficiently.
• Signal Switching: Ideal for digital circuits where signals need to be routed or switched.
• Relay Replacement: It can serve as a solid-state relay in low-power applications.
• LED Drivers: Suitable for driving LEDs in lighting applications due to its low on-resistance and efficient switching.

Electrical Characteristics:

• Gate-Source Voltage (V_GS): Maximum of ±20V
• Drain-Source Breakdown Voltage (V(BR)DSS): Minimum of 60V
• Input Capacitance (C_iss): Typically around 60 pF, which contributes to its fast switching performance.

Conclusion:

The 2N7002PS from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a variety of low-voltage applications. Its compact size, low on-resistance, and fast switching capabilities make it a popular choice among engineers and designers for modern electronic circuits.