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2N7002

  • In Stock: 60000
  • Available: 9400
  • Updated: 1 Day ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.02754US $0.03
10+US $0.01836US $0.18
30+US $0.01377US $0.41
100+US $0.01102US $1.10
500+US $0.01010US $5.05
1000+US $0.00918US $9.18

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  • Description
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Description

The 2N7002 is a N-channel enhancement mode MOSFET designed for low voltage, low current applications. It belongs to the 2N series of MOSFETs and is widely used in various electronic circuits due to its compact size, low ON-resistance, and high switching speed.

Key Features:

  • N-Channel Enhancement Mode: The 2N7002 operates in the enhancement mode, meaning it requires a positive gate-to-source voltage (VGS) to turn the transistor on. This makes it suitable for use in low voltage applications where precise control over switching is required.
  • Low ON-Resistance (RDS(ON)): With a low ON-resistance typically in the range of a few ohms, the 2N7002 minimizes power losses and voltage drops when conducting current. This feature is essential for efficient switching and power management in electronic circuits.
  • Low Threshold Voltage (VGS(th)): The MOSFET has a low threshold voltage, typically around 2.1 volts, ensuring it can be easily turned on with standard logic level signals from microcontrollers, digital ICs, or other control circuits.
  • High Switching Speed: The 2N7002 offers fast switching times, enabling rapid transitions between ON and OFF states. This feature is advantageous in applications requiring precise timing or high-speed operation.
  • Small SOT-23 Package: The transistor is available in a compact SOT-23 surface-mount package, which facilitates space-efficient PCB layout and integration into miniature electronic devices.

Applications:

  • Switching Circuits: Used as a switch to control the flow of current in various electronic circuits such as LED drivers, relay drivers, motor control, and power management systems.
  • Level Shifting: Employed for level shifting and signal conversion between different voltage domains in mixed-signal circuitry.
  • Load Switching: Utilized in load switches for battery-powered devices, portable electronics, and low voltage power supplies.
  • Interface Circuits: Integrated into interface circuits for digital logic translation, I/O expansion, and signal conditioning.
  • Amplification: Employed as a small signal amplifier in audio circuits, oscillators, and sensor interfaces.
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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