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2SC2714-Y(TE85L,F)

  • In Stock: 1113349
  • Available: 3000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.22680US $0.23
10+US $0.15120US $1.51
30+US $0.11340US $3.40
100+US $0.09072US $9.07
500+US $0.08316US $41.58
1000+US $0.07560US $75.60

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Product Parameter

  • Manufacturer
    Toshiba
  • Manufacturer's Part No.
    2SC2714-Y(TE85L,F)
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - RF
  • Series
    -
  • Polarity/Channel Type
    NPN
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Part Status
    Active
  • Operating Temperature
    125°C TJ
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Packaging
    Cut Tape (CT)
  • Subcategory
    Other Transistors
  • Number of Terminations
    3
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Published
    2011
  • Max Power Dissipation
    100mW
  • Transistor Type
    NPN
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Single
  • Transistor Application
    AMPLIFIER
  • Collector Emitter Voltage (VCEO)
    30V
  • Max Collector Current
    20mA
  • Collector Emitter Breakdown Voltage
    30V
  • Transition Frequency
    550MHz
  • Max Breakdown Voltage
    30V
  • hFE Min
    40
  • Continuous Collector Current
    20mA
  • Emitter Base Voltage (VEBO)
    4V
  • Gain Bandwidth Product
    550MHz
  • Collector Base Voltage (VCBO)
    40V
  • Highest Frequency Band
    VERY HIGH FREQUENCY B
  • Gain
    23dB
  • Noise Figure (dB Typ @ f)
    2.5dB @ 100MHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 1mA 6V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-PDSO-G3

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