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2SC3356-T1B-A

  • In Stock: 1155619
  • Available: 13641

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.95400US $0.95
10+US $0.63600US $6.36
30+US $0.47700US $14.31
100+US $0.38160US $38.16
500+US $0.34980US $174.90
1000+US $0.31800US $318.00

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Description

The 2SC3356-T1B-A is a high-performance NPN transistor manufactured by California Eastern Laboratories (CEL). This transistor is designed for a variety of applications, including audio amplification, switching, and general-purpose amplification.

Key Features:

  1. Type: NPN Bipolar Junction Transistor (BJT)
  2. Package: The 2SC3356-T1B-A is typically housed in a TO-220 package, which is a standard for power transistors. This package provides good thermal performance and allows for easy mounting on heatsinks.
  3. Voltage Ratings: The transistor has a maximum collector-emitter voltage (Vce) of around 60V, making it suitable for medium-voltage applications.
  4. Current Ratings: It can handle a maximum collector current (Ic) of approximately 5A, which allows it to drive loads effectively in various circuits.
  5. Power Dissipation: The device can dissipate up to 30W of power, depending on the thermal management and ambient conditions, making it suitable for high-power applications.
  6. Gain Characteristics: The transistor features a high current gain (hFE), typically ranging from 50 to 150, which enhances its efficiency in amplification applications.
  7. Frequency Response: The 2SC3356-T1B-A has a transition frequency (fT) of around 100 MHz, allowing it to operate effectively in high-frequency applications.

Applications:

  • Audio Amplifiers: Ideal for use in audio amplification circuits due to its high gain and power handling capabilities.
  • Switching Circuits: Suitable for use in switching applications, such as relay drivers and motor control circuits.
  • General Purpose: Can be used in various general-purpose electronic circuits where NPN transistors are required.

Electrical Characteristics:

  • Collector-Emitter Saturation Voltage (Vce(sat)): Typically low, which helps in reducing power loss during operation.
  • Base-Emitter Voltage (Vbe): Generally around 0.7V when in the active region.
  • Thermal Resistance: The thermal resistance from junction to case is low, which aids in efficient heat dissipation.

Mechanical Characteristics:

  • Lead Configuration: The TO-220 package has three leads: collector, base, and emitter, which are easily identifiable for circuit integration.
  • Mounting: The design allows for easy mounting on PCBs or heatsinks, ensuring effective thermal management.

Conclusion:

The 2SC3356-T1B-A from CEL is a versatile and robust NPN transistor suitable for a wide range of electronic applications. Its combination of high voltage and current ratings, along with good thermal performance, makes it an excellent choice for both hobbyist and professional electronic designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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