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2SC5095-O(TE85L,F)

  • Available: 16

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.35343US $0.35
10+US $0.23562US $2.36
30+US $0.17672US $5.30
100+US $0.14137US $14.14
500+US $0.12959US $64.80
1000+US $0.11781US $117.81

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Toshiba
  • Manufacturer's Part No.
    2SC5095-O(TE85L,F)
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - RF
  • Series
    -
  • Polarity/Channel Type
    NPN
  • Package / Case
    SC-70, SOT-323
  • Part Status
    Active
  • Operating Temperature
    125°C TJ
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Packaging
    Cut Tape (CT)
  • Subcategory
    Other Transistors
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Published
    2009
  • Contact Plating
    Silver, Tin
  • Max Power Dissipation
    100mW
  • Transistor Type
    NPN
  • Mounting Type
    Surface Mount
  • Element Configuration
    Single
  • Collector Emitter Voltage (VCEO)
    10V
  • Max Collector Current
    15mA
  • Collector Emitter Breakdown Voltage
    10V
  • Transition Frequency
    7000MHz
  • Max Breakdown Voltage
    10V
  • hFE Min
    50
  • Power Dissipation
    100mW
  • Emitter Base Voltage (VEBO)
    1.5V
  • Gain Bandwidth Product
    10 GHz
  • Collector Base Voltage (VCBO)
    20V
  • Frequency
    10GHz
  • Gain
    13dB ~ 7dB
  • Noise Figure (dB Typ @ f)
    1.8dB @ 2GHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 7mA 6V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant

SHIPPING GUIDE

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  • Delivery Time

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