2SC5964-TD-H

The 2SC5964-TD-H is a high-performance NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for use in various applications, including audio amplification, switching, and general-purpose amplification.

Key Features:

1. Type: NPN Transistor
2. Package: The 2SC5964-TD-H is typically housed in a TO-220 package, which is a metal can with three leads. This package design allows for efficient heat dissipation, making it suitable for high-power applications.
3. Voltage Ratings: The transistor has a maximum collector-emitter voltage (Vce) rating of around 60V, which allows it to handle significant voltage levels in various circuits.
4. Current Ratings: It can handle a maximum collector current (Ic) of approximately 15A, making it suitable for high-current applications.
5. Power Dissipation: The device can dissipate power up to 50W, depending on the thermal management and conditions of use, which is beneficial for applications requiring robust performance.
6. Gain Characteristics: The transistor features a high current gain (hFE), typically ranging from 20 to 100, which enhances its efficiency in amplification applications.
7. Frequency Response: The 2SC5964-TD-H has a transition frequency (fT) of around 5 MHz, making it suitable for audio and RF applications where frequency response is critical.

Applications:

• Audio Amplifiers: The transistor is often used in audio amplifier circuits due to its ability to handle high currents and provide good linearity.
• Switching Applications: It can be used in switching circuits, such as relay drivers and motor control, where fast switching times and high current handling are required.
• General Purpose: The 2SC5964-TD-H is versatile enough for various general-purpose applications in consumer electronics and industrial equipment.

Thermal Characteristics:

• The TO-220 package allows for effective heat sinking, which is essential for maintaining performance and reliability under load. Proper thermal management is crucial to prevent thermal runaway and ensure longevity.

Electrical Characteristics:

• Collector-Emitter Breakdown Voltage (V(BR)CEO): Typically around 60V.
• Emitter-Base Breakdown Voltage (V(BR)EBO): Generally around 5V.
• Collector-Base Cut-off Current (I(CBO)): Low leakage current, typically in the microamp range, which is important for low-power applications.

Conclusion:

The 2SC5964-TD-H from ON Semiconductor is a robust and versatile NPN transistor suitable for a wide range of applications, particularly in audio and power electronics. Its high current and voltage ratings, combined with good thermal performance, make it a reliable choice for engineers and designers looking for efficient amplification and switching solutions.