2SK3065T100
- Manufacturer's Part No.:2SK3065T100
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- Description:MOSFET N-CH 60V 2A SOT-89
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- In Stock: 426000
- Available: 19000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.25740 | US $0.26 |
10+ | US $0.17160 | US $1.72 |
30+ | US $0.12870 | US $3.86 |
100+ | US $0.10296 | US $10.30 |
500+ | US $0.09438 | US $47.19 |
1000+ | US $0.08580 | US $85.80 |
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- Description
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The 2SK3065T100 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Rohm Semiconductor. This device is designed for various applications, including power management, switching, and amplification in electronic circuits.
Key Features:
- Type: N-channel MOSFET
- Voltage Rating: The 2SK3065T100 typically has a maximum drain-source voltage (V_DS) of around 60V, making it suitable for medium-voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of approximately 30A, which allows it to manage significant power loads effectively.
- On-Resistance (R_DS(on)): The on-resistance is low, typically in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is designed to be low, allowing for easy drive with standard logic levels, which is beneficial for interfacing with microcontrollers and other digital logic devices.
- Package Type: The 2SK3065T100 is usually available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
Applications:
- Power Supply Circuits: Ideal for use in switch-mode power supplies (SMPS) and DC-DC converters due to its efficiency and thermal performance.
- Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
- Audio Amplifiers: Can be used in audio amplification circuits where high current handling and low distortion are required.
- Lighting Control: Effective in LED drivers and lighting control systems, providing efficient switching capabilities.
Electrical Characteristics:
- Gate-Source Voltage (V_GS): The maximum gate-source voltage is typically around ±20V, ensuring safe operation within specified limits.
- Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, allowing for effective heat dissipation and reliable operation under load.
Reliability:
The 2SK3065T100 is designed with robust construction to ensure reliability in various operating conditions. It is rated for high-temperature operation, making it suitable for demanding environments.
Conclusion:
The 2SK3065T100 from Rohm Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a wide range of applications, particularly in power management and control systems. Its combination of high current handling, low on-resistance, and good thermal performance makes it a popular choice among engineers and designers in the electronics industry.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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