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4N30
- Manufacturer's Part No.:4N30
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- Series:-
- Description:-
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- Available: 6852
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerFairchild Semiconductor
- Manufacturer's Part No.4N30
- CategoriesSensors, Transducers
- Sub-CategoriesSensors, Transducers
- Series-
- ECCNEAR99
- PackagingTube
- Input TypeDC
- Output TypeDarlington with Base
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263
- Mounting TypeThrough Hole
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Package / Case6-DIP (0.300, 7.62mm)
- Case ConnectionDRAIN
- Terminal FinishTin (Sn)
- Base Part Number4N30
- Terminal PositionSINGLE
- Number of Channels1
- Number of Elements1
- Voltage - Isolation5300Vrms
- Qualification StatusNot Qualified
- Vce Saturation (Max)1V
- Operating Temperature-55°C~100°C
- Polarity/Channel TypeN-CHANNEL
- Reach Compliance Codenot_compliant
- Number of Terminations2
- Transistor ApplicationSWITCHING
- Voltage - Output (Max)30V
- DS Breakdown Voltage-Min300V
- Current - Output / Channel150mA
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Current Transfer Ratio (Min)100% @ 10mA
- Voltage - Forward (Vf) (Typ)1.2V
- Avalanche Energy Rating (Eas)330 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn On / Turn Off Time (Typ)5μs, 40μs (Max)
- Drain-source On Resistance-Max0.29Ohm
- Pulsed Drain Current-Max (IDM)56A
- Current - DC Forward (If) (Max)80mA
Environmental & Export Classifications
- HTSUS8541.49.8000
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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