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A2C35S12M3

  • Available: 3

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $97.29000US $97.29
10+US $75.67000US $756.70
30+US $64.86000US $1945.80
100+US $59.45500US $5945.50
500+US $57.29300US $28646.50
1000+US $54.05000US $54050.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    STMicroelectronics
  • Manufacturer's Part No.
    A2C35S12M3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Modules
  • Series
    -
  • ECCN
    EAR99
  • Input
    Three Phase Bridge Rectifier
  • IGBT Type
    Trench Field Stop
  • VCEsat-Max
    2.45 V
  • Part Status
    Active
  • Power - Max
    250W
  • REACH Status
    REACH Unaffected
  • Turn On Time
    170 ns
  • Configuration
    Three Phase Inverter with Brake
  • Mounting Type
    Chassis Mount
  • Surface Mount
    NO
  • Terminal Form
    UNSPECIFIED
  • NTC Thermistor
    Yes
  • Package / Case
    Module
  • Base Part Number
    A2C35S12
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Terminal Position
    UPPER
  • Number of Elements
    6
  • Operating Temperature
    -40°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    35
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.45V @ 15V, 35A
  • Gate-Emitter Voltage-Max
    20V
  • Turn Off Time-Nom (toff)
    364 ns
  • Power Dissipation-Max (Abs)
    250W
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    7V
  • Current - Collector (Ic) (Max)
    35A
  • Input Capacitance (Cies) @ Vce
    2154pF @ 25V
  • Current - Collector Cutoff (Max)
    100μA
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-XUFM-X35
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

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