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ALD212908ASAL

  • Available: 8

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $6.24920US $6.25
10+US $5.62428US $56.24
30+US $4.37444US $131.23
100+US $3.59329US $359.33
500+US $3.43706US $1718.53
1000+US $3.12460US $3124.60

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Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

Type: Dual N-channel MOSFET array
Package: 8-pin SOIC
Voltage Rating: Drain-to-source (Vdss) - 10.6V
Current Rating: Continuous drain current (Id) - 80mA per channel
Power Dissipation: 500mW (total)
On-Resistance: 2.7 ohms (typical) per channel
Operating Temperature: -40°C to +125°C

Features
Compact and lightweight SOIC package for space-constrained applications
Dual N-channel MOSFETs for independent switching or parallel operation
Low on-resistance for efficient switching and power conversion
Wide operating voltage range for flexibility in circuit design
RoHS compliant and lead-free

Applications
Battery-powered devices: Efficient switching and control circuits for portable electronics, wearables, and IoT devices.
DC-DC converters: Boosting or inverting small DC voltages in portable power supplies and battery management systems.
LED drivers: Driving and controlling LEDs for backlighting, indication, and small lighting applications.
Signal switching and amplification: Switching audio signals, control signals, and low-power data lines.
Logic level switching: Interfacing between low-voltage microcontrollers and higher-voltage circuits.
General-purpose N-channel MOSFET applications: Implementing various switching and amplification functions in low-power electronic circuits.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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