APL1001J
- Manufacturer's Part No.:APL1001J
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N-CH 1000V 18A SOT-227
- Datasheet:
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- Available: 7660
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APL1001J
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- ECCNEAR99
- MountChassis Mount, Screw
- Width25.4mm
- Height9.6mm
- Length38.2mm
- Weight30.000004g
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count4
- Published1997
- Rise Time14ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeChassis Mount
- Terminal FormUNSPECIFIED
- Current Rating18A
- Number of Pins4
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-227-4, miniBLOC
- Case ConnectionISOLATED
- Fall Time (Typ)14 ns
- Terminal FinishMatte Tin (Sn)
- Factory Lead Time22 Weeks
- Power Dissipation520W
- Terminal PositionUPPER
- Additional FeatureUL RECOGNIZED
- Number of Channels1
- Number of Elements1
- Turn On Delay Time14 ns
- Vgs(th) (Max) @ Id4V @ 2.5mA
- Voltage - Rated DC1kV
- Radiation HardeningNo
- Turn-Off Delay Time60 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max520W Tc
- Number of Terminations4
- Rds On (Max) @ Id, Vgs600m Ω @ 500mA, 10V
- Transistor Element MaterialSILICON
- Gate to Source Voltage (Vgs)30V
- Continuous Drain Current (ID)18A
- Drain to Source Voltage (Vdss)1000V
- Drain-source On Resistance-Max0.6Ohm
- Pulsed Drain Current-Max (IDM)72A
- Input Capacitance (Ciss) (Max) @ Vds7200pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C18A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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