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APT100GN120B2G

  • Available: 35

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $44.87660US $44.88
10+US $33.65745US $336.57
30+US $29.16979US $875.09
100+US $25.80404US $2580.40
500+US $24.23336US $12116.68
1000+US $22.43830US $22438.30

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APT100GN120B2G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • IGBT Type
    Trench Field Stop
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    3
  • Published
    1999
  • Input Type
    Standard
  • Gate Charge
    540nC
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    960W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    100 ns
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Package / Case
    TO-247-3 Variant
  • Test Condition
    800V, 100A, 1 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    TIN SILVER COPPER
  • Switching Energy
    11mJ (on), 9.5mJ (off)
  • Factory Lead Time
    24 Weeks
  • Additional Feature
    HIGH RELIABILITY
  • Number of Elements
    1
  • Turn On Delay Time
    50 ns
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    50ns/615ns
  • Turn-Off Delay Time
    615 ns
  • Element Configuration
    Single
  • Max Collector Current
    245A
  • Max Power Dissipation
    960W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 100A
  • Turn Off Time-Nom (toff)
    935 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Current - Collector Pulsed (Icm)
    300A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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