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APT102GA60B2

  • Available: 8326

Reference Price(In US Dollars)

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1+US $0.00000US $0.00

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APT102GA60B2
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    POWER MOS 8™
  • Polarity/Channel Type
    N-CHANNEL
  • Package / Case
    TO-247-3 Variant
  • Part Status
    Obsolete
  • Operating Temperature
    -55°C~150°C TJ
  • Mount
    Through Hole
  • Packaging
    Tube
  • Subcategory
    Insulated Gate BIP Transistors
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Pin Count
    3
  • Number of Elements
    1
  • Radiation Hardening
    No
  • Published
    1999
  • Pbfree Code
    yes
  • Additional Feature
    LOW CONDUCTION LOSS
  • Case Connection
    COLLECTOR
  • JEDEC-95 Code
    TO-247AD
  • Max Power Dissipation
    780W
  • Power - Max
    780W
  • Mounting Type
    Through Hole
  • Transistor Element Material
    SILICON
  • Element Configuration
    Single
  • Transistor Application
    POWER CONTROL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    183A
  • Collector Emitter Breakdown Voltage
    600V
  • Turn On Time
    64 ns
  • Input Type
    Standard
  • Test Condition
    400V, 62A, 4.7 Ω, 15V
  • IGBT Type
    PT
  • Gate Charge
    294nC
  • Current - Collector Pulsed (Icm)
    307A
  • Gate-Emitter Voltage-Max
    30V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Switching Energy
    1.354mJ (on), 1.614mJ (off)
  • Turn Off Time-Nom (toff)
    389 ns
  • Td (on/off) @ 25°C
    28ns/212ns
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 62A

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e1
  • JESD-30 Code
    R-PSFM-T3

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