APT11F80S
- Manufacturer's Part No.:APT11F80S
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:POWER MOS 8™
- Description:MOSFET N-CH 800V 12A D3PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 8640
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APT11F80S
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesPOWER MOS 8™
- ECCNEAR99
- MountSurface Mount
- FET TypeN-Channel
- PackagingTube
- Pin Count3
- Published1997
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Case ConnectionDRAIN
- Terminal FinishPure Matte Tin (Sn)
- Terminal PositionSINGLE
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Vgs(th) (Max) @ Id5V @ 1mA
- Qualification StatusNot Qualified
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max337W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs900m Ω @ 6A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min800V
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)524 mJ
- Continuous Drain Current (ID)12A
- Peak Reflow Temperature (Cel)245
- Drain to Source Voltage (Vdss)800V
- Drain-source On Resistance-Max1Ohm
- Pulsed Drain Current-Max (IDM)46A
- Input Capacitance (Ciss) (Max) @ Vds2471pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C12A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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