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APT12080JVR
- Manufacturer's Part No.:APT12080JVR
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:POWER MOS V®
- Description:MOSFET N-CH 1200V 15A ISOTOP
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 10755
- Price: please call
- Available: 10755
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Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APT12080JVR
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesPOWER MOS V®
- ECCNEAR99
- MountScrew
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count4
- Published1999
- Rise Time12ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeChassis Mount
- Terminal FormUNSPECIFIED
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-227-4, miniBLOC
- Case ConnectionISOLATED
- Fall Time (Typ)12 ns
- Terminal PositionUPPER
- Additional FeatureUL RECOGNIZED
- Number of Elements1
- Turn On Delay Time16 ns
- Vgs(th) (Max) @ Id4V @ 2.5mA
- Radiation HardeningNo
- Turn-Off Delay Time59 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max450W Tc
- Number of Terminations4
- Rds On (Max) @ Id, Vgs800m Ω @ 7.5A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min1200V
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs485nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)2500 mJ
- Continuous Drain Current (ID)15A
- Drain to Source Voltage (Vdss)1200V
- Drain-source On Resistance-Max0.8Ohm
- Pulsed Drain Current-Max (IDM)60A
- Input Capacitance (Ciss) (Max) @ Vds7800pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C15A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PUFM-X4
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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