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APT14M100B

  • Available: 19

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $16.33070US $16.33
10+US $14.69763US $146.98
30+US $11.43149US $342.94
100+US $9.39015US $939.02
500+US $8.98189US $4490.95
1000+US $8.16535US $8165.35

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APT14M100B
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    POWER MOS 8™
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    16.26mm
  • Height
    5.31mm
  • Length
    21.46mm
  • Weight
    38.000013g
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    3
  • Published
    1997
  • Rise Time
    29ns
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Pbfree Code
    yes
  • REACH Status
    REACH Unaffected
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Through Hole
  • Current Rating
    14A
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-247-3
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    26 ns
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 1 month ago)
  • Factory Lead Time
    18 Weeks
  • Power Dissipation
    500W
  • Terminal Position
    SINGLE
  • Additional Feature
    AVALANCHE RATED
  • Number of Elements
    1
  • Turn On Delay Time
    28 ns
  • Vgs(th) (Max) @ Id
    5V @ 1mA
  • Voltage - Rated DC
    1kV
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    95 ns
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    500W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    900m Ω @ 7A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    120nC @ 10V
  • Gate to Source Voltage (Vgs)
    30V
  • Avalanche Energy Rating (Eas)
    875 mJ
  • Continuous Drain Current (ID)
    14A
  • Drain to Source Voltage (Vdss)
    1000V
  • Drain-source On Resistance-Max
    0.88Ohm
  • Pulsed Drain Current-Max (IDM)
    55A
  • Drain to Source Breakdown Voltage
    1kV
  • Input Capacitance (Ciss) (Max) @ Vds
    3965pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    14A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSFM-T3
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Delivery Time

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