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APT20GF120BRDQ1G

  • Available: 10750

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APT20GF120BRDQ1G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • IGBT Type
    NPT
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    3
  • Published
    2005
  • Input Type
    Standard
  • Gate Charge
    100nC
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    19 ns
  • Mounting Type
    Through Hole
  • Current Rating
    36A
  • Number of Pins
    3
  • Package / Case
    TO-247-3
  • Test Condition
    800V, 15A, 4.3 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    TIN SILVER COPPER
  • Switching Energy
    895μJ (on), 840μJ (off)
  • Number of Elements
    1
  • Voltage - Rated DC
    1.2kV
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    10ns/120ns
  • Element Configuration
    Single
  • Max Collector Current
    36A
  • Max Power Dissipation
    200W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    3.2V @ 15V, 15A
  • Turn Off Time-Nom (toff)
    255 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Collector Emitter Voltage (VCEO)
    3.2V
  • Current - Collector Pulsed (Icm)
    64A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    RoHS Compliant
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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