APT20M22B2VRG
- Manufacturer's Part No.:APT20M22B2VRG
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:POWER MOS V®
- Description:MOSFET N-CH 200V 100A T-MAX
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 7757
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APT20M22B2VRG
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesPOWER MOS V®
- ECCNEAR99
- MountThrough Hole
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Published1997
- Rise Time25ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeThrough Hole
- Current Rating75A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-247-3 Variant
- Case ConnectionDRAIN
- Fall Time (Typ)5 ns
- Terminal FinishTIN SILVER COPPER
- Power Dissipation520W
- Terminal PositionSINGLE
- Number of Elements1
- Turn On Delay Time16 ns
- Vgs(th) (Max) @ Id4V @ 2.5mA
- Voltage - Rated DC200V
- Radiation HardeningNo
- Turn-Off Delay Time48 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max520W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs22m Ω @ 500mA, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs435nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)2500 mJ
- Continuous Drain Current (ID)100A
- Drain-source On Resistance-Max0.022Ohm
- Pulsed Drain Current-Max (IDM)400A
- Input Capacitance (Ciss) (Max) @ Vds10200pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C100A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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