APT20N60BC3G
- Manufacturer's Part No.:APT20N60BC3G
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:CoolMOS™
- Description:MOSFET N-CH 600V 20.7A TO-247
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 7700
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
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1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APT20N60BC3G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesCoolMOS™
- ECCNEAR99
- MountThrough Hole
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Published2004
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247AD
- Mounting TypeThrough Hole
- Current Rating20.7A
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-247-3
- Case ConnectionDRAIN
- Terminal FinishTIN SILVER COPPER
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE ENERGY RATED
- Number of Elements1
- Vgs(th) (Max) @ Id3.9V @ 1mA
- Voltage - Rated DC600V
- Qualification StatusNot Qualified
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max208W Tc
- Reach Compliance Codeunknown
- Number of Terminations3
- Rds On (Max) @ Id, Vgs190m Ω @ 13.1A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs114nC @ 10V
- Avalanche Energy Rating (Eas)690 mJ
- Continuous Drain Current (ID)20.7A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.19Ohm
- Pulsed Drain Current-Max (IDM)62A
- Input Capacitance (Ciss) (Max) @ Vds2440pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C20.7A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSFM-T3
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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