APT30D120BG

The APT30D120BG is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Microsemi, designed for various applications in power management and conversion. This device is particularly suited for use in high-voltage and high-current environments, making it ideal for industrial, automotive, and renewable energy applications.

Key Features:

1. Voltage Rating: The APT30D120BG has a maximum drain-source voltage (V_DS) of 1200V, allowing it to handle high-voltage applications effectively.

2. Current Rating: It is rated for a continuous drain current (I_D) of 30A, which provides substantial current handling capability for demanding applications.

3. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.15 ohms, which minimizes power losses during operation and enhances overall efficiency.

4. Package Type: The device is housed in a TO-247 package, which is known for its robust thermal performance and ease of mounting. This package design allows for effective heat dissipation, crucial for maintaining performance under high load conditions.

5. Thermal Characteristics: The APT30D120BG features a high thermal conductivity, enabling it to operate efficiently at elevated temperatures. The maximum junction temperature (T_j) is rated at 150°C, which provides a good margin for thermal management in various applications.

6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 2-4V, allowing for easy interfacing with standard logic levels.

7. Switching Performance: The device is designed for fast switching applications, with low gate charge (Q_g) values that facilitate rapid turn-on and turn-off, reducing switching losses and improving overall efficiency.

8. Applications: The APT30D120BG is suitable for a wide range of applications, including:

   • Power supplies
   • Motor drives
   • Inverters for renewable energy systems (like solar and wind)
   • UPS (Uninterruptible Power Supplies)
   • Industrial automation systems

Electrical Characteristics:

• Maximum Drain-Source Voltage (V_DS): 1200V
• Continuous Drain Current (I_D): 30A
• Pulsed Drain Current (I_D,pulse): Higher than continuous rating, typically specified in the datasheet.
• Gate-Source Voltage (V_GS): Maximum rating usually around ±20V.
• Thermal Resistance (RθJC): Low thermal resistance values, ensuring efficient heat dissipation.

Conclusion:

The APT30D120BG from Microsemi is a versatile and reliable power MOSFET that combines high voltage and current ratings with excellent thermal performance and efficiency. Its design makes it suitable for a variety of demanding applications, ensuring robust performance in power management systems. For engineers and designers, this device represents a solid choice for enhancing the efficiency and reliability of power electronic circuits.