APT30N60KC6
- Manufacturer's Part No.:APT30N60KC6
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:CoolMOS™
- Description:MOSFET N-CH 600V 30A TO-220
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 8718
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APT30N60KC6
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesCoolMOS™
- ECCNEAR99
- MountThrough Hole
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Published2010
- Rise Time17ns
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Case ConnectionDRAIN
- Fall Time (Typ)48 ns
- Terminal FinishTIN
- Power Dissipation219W
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED, ULTRA-LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time9 ns
- Vgs(th) (Max) @ Id3.5V @ 960μA
- Radiation HardeningNo
- Turn-Off Delay Time74 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max219W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs125m Ω @ 14.5A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min600V
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs88nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Avalanche Energy Rating (Eas)636 mJ
- Continuous Drain Current (ID)30A
- Drain to Source Voltage (Vdss)600V
- Pulsed Drain Current-Max (IDM)89A
- Input Capacitance (Ciss) (Max) @ Vds2267pF @ 25V
- Current - Continuous Drain (Id) @ 25°C30A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSFM-T3
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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