APT32F120J
- Manufacturer's Part No.:APT32F120J
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:POWER MOS 8™
- Description:MOSFET N-CH 1200V 33A SOT-227
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 23
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $92.43000 | US $92.43 |
10+ | US $69.32250 | US $693.23 |
30+ | US $60.07950 | US $1802.39 |
100+ | US $53.14725 | US $5314.73 |
500+ | US $49.91220 | US $24956.10 |
1000+ | US $46.21500 | US $46215.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APT32F120J
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesPOWER MOS 8™
- ECCNEAR99
- MountChassis Mount, Screw
- Width25.4mm
- Height9.6mm
- Length38.2mm
- Weight30.000004g
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count4
- Rise Time60ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeChassis Mount
- Terminal FormUNSPECIFIED
- Current Rating32A
- Number of Pins4
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-227-4, miniBLOC
- Case ConnectionISOLATED
- Contact PlatingTin
- Fall Time (Typ)90 ns
- Factory Lead Time22 Weeks
- Power Dissipation960W
- Terminal PositionUPPER
- Additional FeatureAVALANCHE RATED, UL RECOGNIZED, HIGH RELIABILITY
- Number of Channels1
- Number of Elements1
- Turn On Delay Time100 ns
- Vgs(th) (Max) @ Id5V @ 2.5mA
- Voltage - Rated DC1.2kV
- Radiation HardeningNo
- Turn-Off Delay Time315 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max960W Tc
- Number of Terminations4
- Rds On (Max) @ Id, Vgs320m Ω @ 25A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs560nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)2700 mJ
- Continuous Drain Current (ID)33A
- Drain to Source Voltage (Vdss)1200V
- Drain-source On Resistance-Max0.32Ohm
- Drain to Source Breakdown Voltage1.2kV
- Input Capacitance (Ciss) (Max) @ Vds18200pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C33A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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