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APT33GF120LRDQ2G

  • Available: 8850

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APT33GF120LRDQ2G
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Through Hole
  • IGBT Type
    NPT
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    3
  • Published
    1999
  • Input Type
    Standard
  • Gate Charge
    170nC
  • Part Status
    Obsolete
  • Pbfree Code
    yes
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    31 ns
  • Mounting Type
    Through Hole
  • Current Rating
    64A
  • Package / Case
    TO-264-3, TO-264AA
  • Test Condition
    800V, 25A, 4.3 Ω, 15V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Switching Energy
    1.315mJ (on), 1.515mJ (off)
  • Factory Lead Time
    38 Weeks
  • Number of Elements
    1
  • Voltage - Rated DC
    1.2kV
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    14ns/185ns
  • Element Configuration
    Single
  • Max Collector Current
    64A
  • Max Power Dissipation
    357W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    3V @ 15V, 25A
  • Gate-Emitter Voltage-Max
    30V
  • Turn Off Time-Nom (toff)
    355 ns
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Current - Collector Pulsed (Icm)
    75A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-PSFM-T3
  • JESD-609 Code
    e1
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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