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APT40SM120B
- Manufacturer's Part No.:APT40SM120B
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- Series:-
- Description:MOSFET N-CH 1200V 41A TO247
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- In Stock: 9477
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- Available: 9477
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Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APT40SM120B
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- Height25.96mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingBulk
- Published1997
- Vgs (Max)+25V, -10V
- TechnologySiCFET (Silicon Carbide)
- Part StatusObsolete
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeThrough Hole
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-247-3
- Case ConnectionDRAIN
- Lifecycle StatusOBSOLETE (Last Updated: 2 weeks ago)
- Factory Lead Time22 Weeks
- Power Dissipation273W
- Terminal PositionSINGLE
- Threshold Voltage1.7V
- Number of Channels1
- Number of Elements1
- Turn On Delay Time10 ns
- Vgs(th) (Max) @ Id3V @ 1mA (Typ)
- Turn-Off Delay Time32 ns
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max273W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs100m Ω @ 20A, 20V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs130nC @ 20V
- Gate to Source Voltage (Vgs)25V
- Avalanche Energy Rating (Eas)2500 mJ
- Continuous Drain Current (ID)41A
- Max Junction Temperature (Tj)175°C
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain to Source Voltage (Vdss)1200V
- Manufacturer Package IdentifierTO-247 (B)
- Drain to Source Breakdown Voltage1.2kV
- Input Capacitance (Ciss) (Max) @ Vds2560pF @ 1000V
- Drive Voltage (Max Rds On,Min Rds On)20V
- Current - Continuous Drain (Id) @ 25°C41A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSFM-T3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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