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APT44GA60BD30C

  • Available: 11127

Reference Price(In US Dollars)

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Product Parameter

  • Manufacturer
    Microsemi
  • Manufacturer's Part No.
    APT44GA60BD30C
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    POWER MOS 8™
  • ECCN
    EAR99
  • Mount
    Through Hole
  • IGBT Type
    PT
  • Packaging
    Tube
  • Pin Count
    3
  • Published
    2011
  • Input Type
    Standard
  • Gate Charge
    128nC
  • Part Status
    Obsolete
  • Power - Max
    337W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    29 ns
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Test Condition
    400V, 26A, 4.7 Ω, 15V
  • Case Connection
    COLLECTOR
  • Switching Energy
    409μJ (on), 450μJ (off)
  • Terminal Position
    SINGLE
  • Additional Feature
    LOW CONDUCTION LOSS
  • Number of Elements
    1
  • Td (on/off) @ 25°C
    16ns/102ns
  • Qualification Status
    Not Qualified
  • Max Collector Current
    78A
  • Max Power Dissipation
    337W
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    3
  • Transistor Application
    POWER CONTROL
  • Vce(on) (Max) @ Vge, Ic
    1.6V @ 15V, 26A
  • Gate-Emitter Voltage-Max
    30V
  • Turn Off Time-Nom (toff)
    292 ns
  • Operating Temperature (Max)
    150°C
  • Transistor Element Material
    SILICON
  • Gate-Emitter Thr Voltage-Max
    6V
  • Collector Emitter Voltage (VCEO)
    1.6V
  • Current - Collector Pulsed (Icm)
    130A
  • Collector Emitter Breakdown Voltage
    600V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • RoHS Status
    RoHS Compliant
  • JESD-30 Code
    R-PSFM-T3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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