APT45GP120J
- Manufacturer's Part No.:APT45GP120J
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:POWER MOS 7®
- Description:IGBT 1200V 75A 329W SOT227
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 17
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $71.11384 | US $71.11 |
10+ | US $53.33538 | US $533.35 |
30+ | US $46.22400 | US $1386.72 |
100+ | US $40.89046 | US $4089.05 |
500+ | US $38.40147 | US $19200.74 |
1000+ | US $35.55692 | US $35556.92 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APT45GP120J
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Modules
- SeriesPOWER MOS 7®
- ECCNEAR99
- InputStandard
- MountChassis Mount, Screw
- Width25.4mm
- Height9.6mm
- Length38.2mm
- Weight30.000004g
- IGBT TypePT
- Lead FreeLead Free
- Pin Count4
- Published1999
- Part StatusActive
- Pbfree Codeyes
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time47 ns
- ConfigurationSingle
- Mounting TypeChassis Mount
- Terminal FormUNSPECIFIED
- Current Rating75A
- NTC ThermistorNo
- Number of Pins4
- Package / CaseISOTOP
- Case ConnectionISOLATED
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Factory Lead Time17 Weeks
- Input Capacitance3.94nF
- Terminal PositionUPPER
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Voltage - Rated DC1.2kV
- Max Collector Current75A
- Max Power Dissipation329W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations4
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic3.9V @ 15V, 45A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)230 ns
- Transistor Element MaterialSILICON
- Continuous Collector Current75A
- Gate-Emitter Thr Voltage-Max6V
- Input Capacitance (Cies) @ Vce3.94nF @ 25V
- Collector Emitter Voltage (VCEO)1.2kV
- Current - Collector Cutoff (Max)500μA
- Collector Emitter Breakdown Voltage1.2kV
- Collector Emitter Saturation Voltage3.3V
- Voltage - Collector Emitter Breakdown (Max)1200V
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusROHS3 Compliant
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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