APT4M120K
- Manufacturer's Part No.:APT4M120K
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N-CH 1200V 5A TO220
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 700
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $6.86400 | US $6.86 |
10+ | US $6.17760 | US $61.78 |
30+ | US $4.80480 | US $144.14 |
100+ | US $3.94680 | US $394.68 |
500+ | US $3.77520 | US $1887.60 |
1000+ | US $3.43200 | US $3432.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APT4M120K
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- Width4.72mm
- Height9.19mm
- Length10.26mm
- Weight6.000006g
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Rise Time4.4ns
- Vgs (Max)±30V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Current Rating4A
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-220-3
- Case ConnectionDRAIN
- Fall Time (Typ)6.9 ns
- Terminal FinishPure Matte Tin (Sn)
- Lifecycle StatusIN PRODUCTION (Last Updated: 1 month ago)
- Factory Lead Time17 Weeks
- Power Dissipation225W
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- Number of Elements1
- Turn On Delay Time7.4 ns
- Vgs(th) (Max) @ Id5V @ 1mA
- Voltage - Rated DC1.2kV
- Radiation HardeningNo
- Turn-Off Delay Time24 ns
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max225W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs4 Ω @ 2A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)5A
- Gate Charge (Qg) (Max) @ Vgs43nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Continuous Drain Current (ID)5A
- Drain to Source Voltage (Vdss)1200V
- Drain-source On Resistance-Max3.8Ohm
- Drain to Source Breakdown Voltage1.2kV
- Input Capacitance (Ciss) (Max) @ Vds1385pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C5A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSFM-T3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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