APT50GN120L2DQ2G
- Manufacturer's Part No.:APT50GN120L2DQ2G
- Manufacturer:
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- Sub-Categories:
- Series:-
- Description:IGBT 1200V 134A 543W TO264
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 160
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $26.82640 | US $26.83 |
10+ | US $20.11980 | US $201.20 |
30+ | US $17.43716 | US $523.11 |
100+ | US $15.42518 | US $1542.52 |
500+ | US $14.48626 | US $7243.13 |
1000+ | US $13.41320 | US $13413.20 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerMicrosemi
- Manufacturer's Part No.APT50GN120L2DQ2G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- Series-
- ECCNEAR99
- MountThrough Hole
- Width20.5mm
- Height5.21mm
- Length26.49mm
- Weight10.6g
- IGBT TypeNPT, Trench Field Stop
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Published1999
- Input TypeStandard
- Gate Charge315nC
- Part StatusActive
- Pbfree Codeyes
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time55 ns
- Mounting TypeThrough Hole
- Current Rating134A
- Number of Pins3
- Package / CaseTO-264-3, TO-264AA
- Test Condition800V, 50A, 2.2 Ω, 15V
- Case ConnectionCOLLECTOR
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Switching Energy4495μJ (off)
- Factory Lead Time29 Weeks
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Turn On Delay Time28 ns
- Voltage - Rated DC1.2kV
- Radiation HardeningNo
- Td (on/off) @ 25°C28ns/320ns
- Turn-Off Delay Time320 ns
- Element ConfigurationSingle
- Max Collector Current134A
- Max Power Dissipation543W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations3
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 50A
- Turn Off Time-Nom (toff)600 ns
- Transistor Element MaterialSILICON
- Continuous Collector Current134A
- Gate-Emitter Thr Voltage-Max6.5V
- Collector Emitter Voltage (VCEO)1.2kV
- Current - Collector Pulsed (Icm)150A
- Collector Emitter Breakdown Voltage1.2kV
- Collector Emitter Saturation Voltage1.7V
- Voltage - Collector Emitter Breakdown (Max)1200V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee1
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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